Modified USAF test
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Modified USAF test

Lateral resolution test for optical microscopy and SEM

Based on the well-known USAF Resolution Test Chart ( “USAF Resolution Test Chart” from 1951) for determining and checking the resolution of optical instruments, we offer a high-resolution version with grating periods up to 274 nm (= 3649 Lp/mm).

  • Substrate: Si
  • Chip size: 10 x 10 mm²
  • Pattern material: Gold
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Description

Lateral resolution test for optical microscopy and SEM

  • Grating pitch: from 500 µm to 274 nm or 2 to 3649 Lp/mm
  • Substrate: Si
  • Chip size: 10 x 10 mm²
  • Pattern material: Gold, 50 nm thick

Offer | Contact

Huebner

Dr. Uwe Hübner
Head of the Competence Centre for Micro- and Nanotechnologies
Your contact for customised enquiries

Phone: +49 (0) 3641 · 206-126
Email: uwe.huebner@leibniz-ipht.de

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