Modified USAF test with Siemens star

Gitterparameter

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Modified USAF test with Siemens star

Lateral resolution test in polymer for optical microscopy

To determine and check the resolution of optical instruments, we offer a high-resolution version of the USAF Resolution Test Chart (“USAF Resolution Test Chart” from 1951) with grating pitchs up to 274 nm (= 3649 Lp/mm), supplemented by a high-resolution Siemens star structure with a grating period of 267 nm inside.

Substrate: Quartz
Chip size: 10 x 10 x 1 mm³
Pattern material: 500 nm PMMA

Categories: Microscopy accessories, Resolution tests Tags: Microscopy, REM, Resolution test

Description

Description

Lateral resolution test in polymer for optical microscopy

USAF grating pitchs: From 500 µm to 274 nm (=3649 Lp/mm)
Siemens star: Pitch up to 267 nm
Substrate: Quartz
Chip size: 10 x 10 x 1 mm³
Pattern material: 500 nm PMMA*
Other materials on request

*ARP6200 von Allresist GmbH

Offer | Contact

Dr. Uwe Hübner
Head of the Competence Centre for Micro- and Nanotechnologies
Your contact for customised enquiries

Phone: +49 (0) 3641 · 206-126
Email: uwe.huebner@leibniz-ipht.de