NIL-Master
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150 mm Si Wafer with 10 x 10 cm² grating area (pitch 200 nm)
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NIL-Master

On customer request: Master for nanoimprint lithography (NIL), suitable for nano-optical or microfluidic applications.

Left page: sample images.

Minimum structure period: 200 nm
Maximum area: 135 mm
Materials: Silicon, quartz, resist on silicon/quartz

 

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Description

Our technologies enable nanoscale structuring on wafer scale up to 150 mm (6″), e.g. for the production of masters for nanoimprint lithography (NIL) for nanooptical or microfluidic applications.

  • Smallest structure period 200 nm
  • Full area up to 135 mm
  • Material: Si, quartz, resist on Si/quartz

Offer | Contact

Huebner

Dr. Uwe Hübner
Head of the Competence Centre for Micro- and Nanotechnologies
Your contact for customised enquiries

Phone: +49 (0) 3641 · 206-126
Email: uwe.huebner@leibniz-ipht.de

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